Spin valve effect and negative tunnel magnetoresistance in a quantum dot transistor
DOI10.1016/J.PHYSLETA.2010.07.026zbMATH Open1248.82074OpenAlexW2089494368MaRDI QIDQ455291FDOQ455291
Authors: Yibo Ying, Guojun Jin
Publication date: 4 October 2012
Published in: Physics Letters. A (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.physleta.2010.07.026
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- Tunneling through two single molecular magnets in series arrangement junction in parallel/antiparallel situations
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- SPIN-DEPENDENT TRANSPORT THROUGH A FINITE INTERACTING QUANTUM DOT WITH INTRADOT SPIN-FLIP SCATTERING
- Transport of spin-polarized electrons through an NEM-SET structure with ferromagnetic electrodes
- Spin accumulation on the spin-dependent transport through a quantum dot coupled to ferromagnet electrodes
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