Transient analysis of LE‐VGF growth of compound semiconductors
DOI10.1108/09615539810241141zbMath0962.76632MaRDI QIDQ4700966
Yasunori Okano, Susumu Sakai, Takahiro Morita, Jun Shimizu
Publication date: 19 June 2001
Published in: International Journal of Numerical Methods for Heat & Fluid Flow (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/09615539810241141
finite differences; growth rate; crystal growth; thermal conductivity; boundary fixing method; crucible thickness; liquid encapsulated vertical gradient freezing method; melt/crystal interface shape
80A22: Stefan problems, phase changes, etc.
76T99: Multiphase and multicomponent flows
76M20: Finite difference methods applied to problems in fluid mechanics
82D37: Statistical mechanics of semiconductors
Cites Work
- Two-dimensional unsteady solidification problem calculated by using the boundary-fitted coordinate system
- Computer simulation of liquid encapsulated vertical bridgman crystal growth: pseudo steady‐state calculations
- A numerical method for solving the two‐dimensional unsteady solidification problem with the motion of melt by using the boundary‐fitted co‐ordinate system