SIMULATION OF SOME QUANTUM MODELS FOR SEMICONDUCTORS
DOI10.1142/S0218202502002033zbMath1162.35444MaRDI QIDQ4799000
No author found.
Publication date: 16 March 2003
Published in: Mathematical Models and Methods in Applied Sciences (Search for Journal in Brave)
bifurcationsnumerical simulationSchrödinger-Poisson problemresonantQuantum hydrodynamical model semiconductor equationstunnelling diode
PDEs in connection with fluid mechanics (35Q35) PDEs in connection with quantum mechanics (35Q40) Statistical mechanics of semiconductors (82D37) Numerical solution of boundary value problems involving ordinary differential equations (65L10) Quantum hydrodynamics and relativistic hydrodynamics (76Y05)
Related Items (4)
Cites Work
- On a one-dimensional Schrödinger-Poisson scattering model
- On the stationary quantum drift-diffusion model
- Numerical simulation of the smooth quantum hydrodynamic model for semiconductor devices
- Finite element approximation of electrostatic potential in one dimensional multilayer structures with quantized electronic charge
- Global Nonnegative Solutions of a Nonlinear Fourth-Order Parabolic Equation for Quantum Systems
- A Positivity-Preserving Numerical Scheme for a Nonlinear Fourth Order Parabolic System
- Closure conditions for classical and quantum moment hierarchies in the small-temperature limit
- A variational formulation of schrödinger-poisson systems in dimension d ≤ 3
- A Stationary Schrödinger-Poisson System Arising from the Modelling of Electronic Devices
- The Quantum Hydrodynamic Model for Semiconductor Devices
- NUMERICAL ANALYSIS AND CONTROL OF BIFURCATION PROBLEMS (II): BIFURCATION IN INFINITE DIMENSIONS
- On the Quantum Correction For Thermodynamic Equilibrium
- The Stationary Current-Voltage Characteristics of the Quantum Drift-Diffusion Model
- The quantum zero space charge model for semiconductors
This page was built for publication: SIMULATION OF SOME QUANTUM MODELS FOR SEMICONDUCTORS