AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS

DOI10.1108/EB010145zbMATH Open0850.65298OpenAlexW2038877176MaRDI QIDQ4872545FDOQ4872545

Authors: N. R. Aluru, Kincho H. Law, P. M. Pinsky, Robert W. Dutton 

Publication date: 17 June 1996

Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb010145

zbMATH Keywords

energy methodfinite elementboundary integralsBoltzmann transport equationsemiconductor device simulationmulti-dimensional hydrodynamic model

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Boundary element methods for boundary value problems involving PDEs (65N38) Applications to the sciences (65Z05)

Cites Work

• On the symmetric form of systems of conservation laws with entropy
• ON THE WELL‐POSEDNESS OF THE TWO‐DIMENSIONAL HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
• A finite element formulation for the hydrodynamic semiconductor device equations

Cited In (1)

• A review of hydrodynamical models for semiconductors: Asymptotic behavior

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