AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS

DOI10.1108/EB010145MaRDI QIDQ4872545zbMATH OpenOpenAlexFDO

Authors N. R. Aluru, Kincho H. Law, P. M. Pinsky, Robert W. Dutton

Publication date 17 June 1996

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/eb010145

zbMATH Keywords

energy methodfinite elementboundary integralsBoltzmann transport equationsemiconductor device simulationmulti-dimensional hydrodynamic model

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Boundary element methods for boundary value problems involving PDEs (65N38) Applications to the sciences (65Z05)

Cites work

• A finite element formulation for the hydrodynamic semiconductor device equations
• ON THE WELL‐POSEDNESS OF THE TWO‐DIMENSIONAL HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
• On the symmetric form of systems of conservation laws with entropy

Cited in

(1)

• A review of hydrodynamical models for semiconductors: Asymptotic behavior

This page was built for publication: AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4872545)