Global existence and asymptotic stability to the full 1D hydrodynamic model for semiconductor devices

DOI10.1512/IUMJ.1995.44.2016MaRDI QIDQ4884458zbMATH OpenOpenAlexFDO

Authors Bo Zhang

Publication date 3 June 1997

Published in Indiana University Mathematics Journal (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1512/iumj.1995.44.2016

zbMATH Keywords

asymptotic stabilityglobal existencesemiconductor deviceshydrodynamic model

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) Smoothness and regularity of solutions to PDEs (35B65) PDEs in connection with optics and electromagnetic theory (35Q60)

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Cited in

(7)

• On a viscous-hydrodynamic model for semiconductors: Numerical simulation and stability analysis
• A review of hydrodynamical models for semiconductors: Asymptotic behavior
• Thresholds in three-dimensional restricted Euler-Poisson equations.
• Local-in-time well-posedness of a regularized mathematical model for silicon MESFET
• On a Local Existence Theorem for a Simplified One-Dimensional Hydrodynamic Model for Semiconductor Devices
• The asymptotic behavior of global smooth solutions to the hydrodynamic model for semiconductors with spherical symmetry
• An improved local blow-up condition for Euler-Poisson equations with attractive forcing

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