Global existence and asymptotic stability to the full 1D hydrodynamic model for semiconductor devices

DOI10.1512/iumj.1995.44.2016zbMath0863.35104OpenAlexW2068651196MaRDI QIDQ4884458

Bo Zhang

Publication date: 3 June 1997

Published in: Indiana University Mathematics Journal (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1512/iumj.1995.44.2016

zbMATH Keywords

asymptotic stabilityglobal existencehydrodynamic modelsemiconductor devices

Mathematics Subject Classification ID

Smoothness and regularity of solutions to PDEs (35B65) Asymptotic behavior of solutions to PDEs (35B40) PDEs in connection with optics and electromagnetic theory (35Q60)

Related Items (3)

A review of hydrodynamical models for semiconductors: Asymptotic behavior ⋮ Thresholds in three-dimensional restricted Euler-Poisson equations. ⋮ An improved local blow-up condition for Euler-Poisson equations with attractive forcing

This page was built for publication: Global existence and asymptotic stability to the full 1D hydrodynamic model for semiconductor devices