Global existence and asymptotic stability to the full 1D hydrodynamic model for semiconductor devices

DOI10.1512/IUMJ.1995.44.2016zbMATH Open0863.35104OpenAlexW2068651196MaRDI QIDQ4884458FDOQ4884458

Authors: Bo Zhang 

Publication date: 3 June 1997

Published in: Indiana University Mathematics Journal (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1512/iumj.1995.44.2016

Recommendations

• ASYMPTOTIC BEHAVIOR OF GLOBAL SMOOTH SOLUTIONS TO THE FULL 1D HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
• The asymptotic behavior of global smooth solutions to the hydrodynamic model for semiconductors with spherical symmetry
• Steady-state solutions of a one-dimensional hydrodynamic model for semiconductors
• Asymptotic behavior of the solution to a nonisentropic hydrodynamic model of semiconductors

zbMATH Keywords

asymptotic stabilityglobal existencesemiconductor deviceshydrodynamic model

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) Smoothness and regularity of solutions to PDEs (35B65) PDEs in connection with optics and electromagnetic theory (35Q60)

Cited In (7)

• On a viscous-hydrodynamic model for semiconductors: Numerical simulation and stability analysis
• A review of hydrodynamical models for semiconductors: Asymptotic behavior
• Thresholds in three-dimensional restricted Euler-Poisson equations.
• On a Local Existence Theorem for a Simplified One-Dimensional Hydrodynamic Model for Semiconductor Devices
• Local-in-time well-posedness of a regularized mathematical model for silicon MESFET
• The asymptotic behavior of global smooth solutions to the hydrodynamic model for semiconductors with spherical symmetry
• An improved local blow-up condition for Euler-Poisson equations with attractive forcing

This page was built for publication: Global existence and asymptotic stability to the full 1D hydrodynamic model for semiconductor devices

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4884458)