Existence and regularity of weak solutions to a model for coarsening in molecular beam epitaxy

DOI10.1002/MMA.2648MaRDI QIDQ4921729zbMATH OpenOpenAlexFDO

Authors Jun Zhang, Peicheng Zhu

Publication date 13 May 2013

Published in Mathematical Methods in the Applied Sciences (Search for Journal in Brave)

Full work available at URL https://arxiv.org/abs/1102.0937, http://hdl.handle.net/20.500.11824/576

zbMATH Keywords

model of Langevin typeslope selection

Mathematics Subject Classification ID

Weak solutions to PDEs (35D30) Initial-boundary value problems for higher-order parabolic equations (35K35) Semilinear parabolic equations (35K58)

Abstract: Taking into account the occurrence of a zero of the surface diffusion current and the requirement of the Ehrlich-Schwoebel effect, Siegert et al cite{Siegert94} formulate a model of Langevin type that describes the growth of pyramidlike structures on a surface under conditions of molecular beam epitaxy, and that the slope of these pyramids is selected by the crystalline symmetries of the growing film. In this article, the existence and uniqueness of weak solution to an initial boundary value problem for this model is proved, in the case that the noise is neglected. The regularity of the weak solution to models, with/without slope selection, is also investigated.

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Cites work

• A fourth-order parabolic equation modeling epitaxial thin film growth
• Dynamic Scaling of Growing Interfaces
• Global solutions in higher dimensions to a fourth-order parabolic equation modeling epitaxial thin-film growth
• Nonlinear Schrödinger evolution equations
• Regularity and blow up in a surface growth model
• Solutions to a model for interface motion by interface diffusion
• Thin film epitaxy with or without slope selection
• Upper bound on the coarsening rate for an epitaxial growth model
• Upper bounds on coarsening rates

Cited in

(3)

• On the existence of solutions for amorphous molecular beam epitaxy
• Global well-posedness of solutions for the epitaxy thin film growth model
• Well-posedness for a molecular beam epitaxy model

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