Stochastic Resonance of Charge Carriers Diffusion in a Semiconductor Layer under a Nonuniform Low Temperature
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Publication:5029275
DOI10.1080/23324309.2019.1709873OpenAlexW3002511444WikidataQ126306460 ScholiaQ126306460MaRDI QIDQ5029275
Publication date: 11 February 2022
Published in: Journal of Computational and Theoretical Transport (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1080/23324309.2019.1709873
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Cites Work
- Double time-delays induced stochastic dynamical characteristics for a metapopulation system subjected to the associated noises and a multiplicative periodic signal
- Stochastic stability and state shifts for a time-delayed cancer growth system subjected to correlated multiplicative and additive noises
- Stochastic dynamical features for a time-delayed ecological system of vegetation subjected to correlated multiplicative and additive noises
- The noise makes the signal: what a small fry should know about stochastic resonance
- Stochastic dynamical characteristics for a time-delayed insect outbreak model driven by correlated multiplicative and additive noises
- Stochastic Resonance
- Monte Carlo Simulation of Charge Carriers Diffusion in a Nonhomogeneous Medium with a Nonuniform Temperature
- Brownian motion in a field of force and the diffusion model of chemical reactions
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