Transition-metal dichalcogenide heterostructure solar cells: a numerical study

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Publication:511886

DOI10.1007/S10910-016-0669-9zbMATH Open1360.78034arXiv1605.03318OpenAlexW2373868261MaRDI QIDQ511886FDOQ511886

A. Thilagam

Publication date: 22 February 2017

Published in: Journal of Mathematical Chemistry (Search for Journal in Brave)

Abstract: We evaluate the tunneling short-circuit current density JTU in a p-i-n solar cell in which the transition metal dichalcogenide heterostructure (MoS2/WS2 superlattice) is embedded in the intrinsic i region. The effects of varying well and barrier widths, Fermi energy levels and number of quantum wells in the i region on JTU are examined. A similar analysis is performed for the thermionic current JTH that arises due to the escape and recapture of charge carriers between adjacent potential wells in the i-region. The interplay between JTU and JTH in the temperature range (300 K - 330 K) is examined. The thermionic current is seen to exceed the tunneling current considerably at temperatures beyond 310 K, a desirable attribute in heterostructure solar cells. This work demonstrates the versatility of monolayer transition metal dichalcogenides when utilized as fabrication materials for van der Waals heterostructure solar cells.


Full work available at URL: https://arxiv.org/abs/1605.03318











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