On stability of epitaxially strained thin films in cubic crystal growth
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Publication:5197319
zbMATH Open1438.74087MaRDI QIDQ5197319FDOQ5197319
Authors: Wangmin Zhou
Publication date: 20 September 2019
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- A new method for relaxation of elastic stresses during the growth of heteroepitaxial films
- Effects of elastic anisotropy on the surface stability of thin film/substrate system
- Modeling elastic effects in epitaxial growth. Stress-induced instabilities of epitaxially grown surfaces.
- Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate. II. Application to inxga1 - xas/InP system
- Interaction of misfit dislocations with perturbated surface in epitaxial thin film
- Weakly non-linear bifurcation analysis of pattern formation in strained alloy film growth
- Relationship between the orientation of texture and heteroepitaxy of diamond and related materials films on silicon single crystal and the valence electron structure of the interface
- The nonlinear effect of lattice mismatch parameter on morphological and compositional instabilities of epitaxial layers
- Strain relaxation in an alloy film with a rough free surface
- The Asaro-Tiller-Grinfeld instability revisited
- Morphological stability of epitaxial thin elastic films by van der Waals force
- The elastic field of a surface step: The Marchenko--Parshin formula in the linear case
- Morphological stability of electrostrictive thin films
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