Transport properties in resonant tunneling heterostructures
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Publication:5284715
stabilityWKB approximationHartree approximationnonlinear Schrödinger equationmodel of a heterostructure in semiconductors
NLS equations (nonlinear Schrödinger equations) (35Q55) Semiclassical techniques, including WKB and Maslov methods applied to problems in quantum theory (81Q20) Transport processes in time-dependent statistical mechanics (82C70) Singular perturbations, turning point theory, WKB methods for ordinary differential equations (34E20)
Abstract: We use an adiabatic approximation in terms of instantaneous resonances to study the steady-state and time-dependent transport properties of interacting electrons in biased resonant tunneling heterostructures. This approach leads, in a natural way, to a transport model of large applicability consisting of reservoirs coupled to regions where the system is described by a nonlinear Schr"odinger equation. From the mathematical point of view, this work is non-rigorous but may offer some fresh and interesting problems involving semiclassical approximation, adiabatic theory, non-linear Schr"odinger equations and dynamical systems.
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Cites work
Cited in
(21)- DESIGN OF SEMICONDUCTOR HETEROSTRUCTURES VIA INVERSE QUANTUM SCATTERING
- Far from equilibrium steady states of 1D-Schrödinger-Poisson systems with quantum wells II
- Comparing the relativistic and non-relativistic transmission coefficients of the electron transport through a quantum heterostructure
- Far from equilibrium steady states of 1D-Schrödinger-Poisson systems with quantum wells. I
- Adiabatic evolution of 1D shape resonances: an artificial interface conditions approach
- Adiabatic evolution and shape resonances
- The Landauer-Büttiker Formula and Resonant Quantum Transport
- Quantum evolution in the regime of quantum wells in a semiclassical island with artificial interface conditions
- Gap anisotropy and tunneling currents
- Semiclassical perturbation theory
- Self-averaging criterion of the resonant tunnel conductance of an N-I-N contact with weak structural disorder in the \(I\) layer
- Effect of tunnel resonances on fluxon radiation loss in a long S-I-S tunnel junction with weak structural disorder in the I layer
- scientific article; zbMATH DE number 1534565 (Why is no real title available?)
- Resonances and tunneling in a quantum wire
- Multiscale simulation of transport in an open quantum system: Resonances and WKB interpolation
- Wave operators, similarity and dynamics for a class of Schrödinger operators with generic non-mixed interface conditions in 1D
- New possibilities for obtaining steeply nonlinear current-voltage characteristics in some semiconductor structures
- Study on the current bistability and hysteresis in resonant-tunneling structures
- Phase control of resonant tunneling in nanostructures
- Uniqueness for Dissipative Schrödinger-Poisson Systems
- A double scale fast algorithm for the transient evolution of a resonant tunneling diode
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