Thomas-Fermi Approach to Impure Semiconductor Band Structure
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Publication:5340844
DOI10.1103/PhysRev.131.79zbMath0131.45501MaRDI QIDQ5340844
Publication date: 1963
Published in: Physical Review (Search for Journal in Brave)
Related Items (4)
An alternative approach to solutions of the MGECSC potential in presence of external electric field ⋮ Thomas-Fermi model for quasi one-dimensional finite crystals ⋮ Perturbation-Moment Method: Application to Band Structure of Impure Semiconductors ⋮ Theory of Bound States in a Random Potential
Cites Work
- The modification of electron energy levels by impurity atoms
- One-Dimensional Impurity Bands
- Electron Levels in a One-Dimensional Random Lattice
- Theory of Tunneling
- Spectral representations of the mass and polarisation operators at arbitrary temperatures
- The Dynamics of a Disordered Linear Chain
- Energy Levels of a Disordered Alloy
- Energy Levels of a Disordered Alloy
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