Thomas-Fermi Approach to Impure Semiconductor Band Structure

DOI10.1103/PHYSREV.131.79MaRDI QIDQ5340844zbMATH OpenFDO

Authors Evan O'Neill Kane

Publication date 1963

Published in Physical Review (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1103/PHYSREV.131.79

zbMATH Keywords

mechanics of particles and systems

Cites work

• Electron Levels in a One-Dimensional Random Lattice
• Energy Levels of a Disordered Alloy
• Energy Levels of a Disordered Alloy
• One-Dimensional Impurity Bands
• Spectral representations of the mass and polarisation operators at arbitrary temperatures
• The Dynamics of a Disordered Linear Chain
• The modification of electron energy levels by impurity atoms
• Theory of Tunneling

Cited in

(5)

• Perturbation-Moment Method: Application to Band Structure of Impure Semiconductors
• Theory of Bound States in a Random Potential
• Thomas-Fermi model for quasi one-dimensional finite crystals
• High magnetic field effects on transport coefficients in heavily doped \(n\)-type \(\mathrm{Mg_2Si}\)
• An alternative approach to solutions of the MGECSC potential in presence of external electric field

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