Simulation of the diffusion of point defects in structures with local elastic stresses

DOI10.1016/J.APM.2010.08.002zbMATH Open1211.82064arXivcond-mat/0610782OpenAlexW1994996033MaRDI QIDQ534875FDOQ534875

Oleg Velichko

Publication date: 10 May 2011

Published in: Applied Mathematical Modelling (Search for Journal in Brave)

Abstract: The stress-mediated diffusion of nonequilibrium point defects from the surface to the bulk of the semiconductor is investigated by computer simulation. It is supposed that point defects are generated in the surface region by ion implantation and during diffusion pass over the local region of elastic stresses because the average defect migration length is greater than the thickness and depth of the strained layer. Within the strained layer point defect segregation or heavily defect depletion occur if defect drift under stresses is directed respectively in or out of the layer. On the other hand, the calculations show that, in contrast to the case of local defect sink, the local region of elastic stresses practically does not change the distribution of defects beyond this region if there is no generation/absorption of point defects within the strained layer.

Full work available at URL: https://arxiv.org/abs/cond-mat/0610782

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zbMATH Keywords

semiconductorspoint defectsdefect engineeringdiffusion modellingstress-mediated diffusion

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites Work

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Cited In (5)

• Modeling microstructural evolution by rearranging point defects in elastic media
• Impurity diffusion through strained semiconductors
• The stress-driven redistribution of point defects in the vicinity of crack-like singularities
• Defects in Amorphous Semiconductors: Amorphous Silicon
• The stress-driven migration of point defects to a crack

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