Nano-scale MOSFET device modelling with quantum mechanical effects
From MaRDI portal
Publication:5423673
DOI10.1017/S0956792506006656zbMath1121.82373OpenAlexW2134677683MaRDI QIDQ5423673
Henok Abebe, Ellis Cumberbatch, Shigeyasu Uno
Publication date: 31 October 2007
Published in: European Journal of Applied Mathematics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1017/s0956792506006656
Related Items (4)
Approximate solutions to the quantum drift-diffusion model of semiconductors ⋮ Boundary layer analysis in the semiclassical limit of a quantum drift-diffusion model ⋮ The combined viscous semi-classical limit for a quantum hydrodynamic system with barrier potential ⋮ Two-Dimensional Modeling of Electron Flow Through a Poorly Conducting Layer
This page was built for publication: Nano-scale MOSFET device modelling with quantum mechanical effects
