A study of the operating parameters and barrier thickness of \(\text{Al}_{0.08}\text{In}_{0.08}\text{Ga}_{0.84}\text{N}/\text{Al}_{x}\text{In}_{y}\text{Ga}_{1-x-y}\text{N}\) double quantum well laser diodes

DOI10.1007/s11431-010-4183-1zbMath1219.82193MaRDI QIDQ546506

Yong-Cai Geng, Sumit K. Garg

Publication date: 24 June 2011

Published in: Science China. Technological Sciences (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s11431-010-4183-1

zbMATH Keywords

quantum well; AlInGaN; barrier thickness; quaternary; UV laser diode

Mathematics Subject Classification ID

82D37: Statistical mechanics of semiconductors

78A60: Lasers, masers, optical bistability, nonlinear optics