BOUND POLARON IN A POLAR SEMICONDUCTOR HETEROJUNCTION IN STATIC ELECTRIC FIELD

DOI10.1142/S0217979206034741zbMATH Open1107.82403MaRDI QIDQ5484237FDOQ5484237

Authors: Jia Liu, Jing-Lin Xiao 

Publication date: 24 August 2006

Published in: International Journal of Modern Physics B (Search for Journal in Brave)

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zbMATH Keywords

heterojunctionelectron area densitypolaronic correctiontriangular potential approximation

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites Work

• Ground-State Energy of Bound Polarons

Cited In (6)

• ION- AND ELECTRON-LO PHONON EFFECTS ON BOUND POLARONS IN POLAR RECTANGULAR QUANTUM WIRES
• BOUND POLARON IN A QUANTUM WELL UNDER THE INFLUENCE OF AN ELECTRIC FIELD
• Title not available (Why is that?)
• Polarons and Bipolarons
• SPIN-SPLITTING OF THE BOUND POLARON'S GROUND STATE BINDING ENERGY INDUCED BY THE RASHBA SPIN–ORBIT INTERACTION UNDER THE PERPENDICULAR MAGNETIC FIELD
• Bound polaron in a wurtzite \(\text{GaN}/\text{Al}_{x}\text{Ga}_{1 - x}\text{N}\) ellipsoidal finite-potential quantum dot

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