BOUND POLARON IN A POLAR SEMICONDUCTOR HETEROJUNCTION IN STATIC ELECTRIC FIELD

DOI10.1142/S0217979206034741MaRDI QIDQ5484237zbMATH OpenFDO

Authors Jia Liu, Jing-Lin Xiao

Publication date 24 August 2006

Published in International Journal of Modern Physics B (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1142/S0217979206034741

zbMATH Keywords

electron area densityheterojunctionpolaronic correctiontriangular potential approximation

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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Cites work

• Ground-State Energy of Bound Polarons

Cited in

(6)

• Bound polaron in a wurtzite \(\text{GaN}/\text{Al}_{x}\text{Ga}_{1 - x}\text{N}\) ellipsoidal finite-potential quantum dot
• scientific article; zbMATH DE number 5920134 (Why is no real title available?)
• ION- AND ELECTRON-LO PHONON EFFECTS ON BOUND POLARONS IN POLAR RECTANGULAR QUANTUM WIRES
• BOUND POLARON IN A QUANTUM WELL UNDER THE INFLUENCE OF AN ELECTRIC FIELD
• Polarons and Bipolarons
• SPIN-SPLITTING OF THE BOUND POLARON'S GROUND STATE BINDING ENERGY INDUCED BY THE RASHBA SPIN–ORBIT INTERACTION UNDER THE PERPENDICULAR MAGNETIC FIELD

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