BANDGAP NARROWING IN NANO-WIRES
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Publication:5484244
Abstract: In this paper we consider two different geometry of quasi one-dimensional semiconductors and calculate their exchange-correlation induced bandgap renormalization (BGR) as a function of the electron-hole plasma density and quantum wire width. Based on different fabrication scheme, we define suitable external confinement potential and then leading-order GW dynamical screening approximation is used in the calculation by treating electron-electron Coulomb interaction and electron-optical phonon interaction. Using a numerical scheme, screened Coulomb potential, probability of different states, profile of charge density and the values of the renormalized gap energy are calculated and the effects of variation of confinement potential width and temperature are studied.
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- scientific article; zbMATH DE number 5500631
Cites work
Cited in
(8)- Bandgap renormalization in T-shaped quantum nanowires
- BLOCH'S THEOREM IN NANOARCHITECTURES
- NUMERICAL STUDIES OF BAND GAP RENORMALIZATION IN V-GROOVED NANO-WIRES
- Band hybridization effect in InAs/GaSb based quantum wells
- Investigation of quantum confinement phenomenon in composition- and diameter-modulated nanowires
- A fresh look at the semiconductor bandgap using constant current data
- Calculation of silicon band gap by means of Fermi-Dirac integrals
- Band gap Renormalization in V-Shaped Quantum Wires
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