Modeling of Island Formation During Submonolayer Deposition: A Stochastic Geometry-Based Simulation Approach

DOI10.1137/040606569zbMATH Open1075.35089OpenAlexW1965304497MaRDI QIDQ5695902FDOQ5695902

Authors: Maozhi Li, J. W. Evans 

Publication date: 6 October 2005

Published in: Multiscale Modeling & Simulation (Search for Journal in Brave)

Full work available at URL: https://lib.dr.iastate.edu/physastro_pubs/457

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• scientific article; zbMATH DE number 2201933

zbMATH Keywords

aggregationMonte Carlo simulationdiffusionepitaxial growthcapture zoneisland formation

Mathematics Subject Classification ID

Reaction-diffusion equations (35K57) Free boundary problems for PDEs (35R35) Interface problems; diffusion-limited aggregation in time-dependent statistical mechanics (82C24)

Cited In (11)

• Growth of islands in two dimensions by irreversible aggregation of particles with a biased diffusion
• Point island dynamics under fixed rate deposition
• Long-time behaviour of point islands under fixed rate deposition
• Stochastic model for the epitaxial growth of two-dimensional islands in the submonolayer regime
• Capture-zone distribution in one-dimensional sub-monolayer film growth: a fragmentation theory approach
• Kinetic Monte Carlo simulation of metallic nanoislands grown by physical vapor deposition
• Island nucleation inside a one-dimensional gap with hindered aggregation
• Irreversible island nucleation and growth with anomalous diffusion in \(d > 2\)
• Stability of single-layer islands on a flat substrate in vacuum deposition processes
• Title not available (Why is that?)
• Monte Carlo Simulations of Solid 2D Phase Growth on 1D Solid Substrates with Square-Wave Surface Profiles. Influence of Hole Design and Depositing Particle Surface Diffusion

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