Cyclotron Resonances, Magnetoresistance, and Brillouin Zones in Semiconductors
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Publication:5819393
DOI10.1103/PhysRev.90.491zbMath0050.45106OpenAlexW2027962941MaRDI QIDQ5819393
Publication date: 1953
Published in: Physical Review (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1103/physrev.90.491
Related Items (8)
Galvanomagnetic Theory for Electrons in Germanium and Silicon: Magnetoresistance in the High-Field Saturation Limit ⋮ Perturbation approach to \textit{ab initio} effective mass calculations ⋮ Experimental Investigations of the Electronic Band Structure of Solids ⋮ Abrupt-Kink Model of Dislocation Motion ⋮ Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation Potentials ⋮ Theory of Cyclotron Resonance in Metals ⋮ Calculation of the Energy Band Structures of the Diamond and Germanium Crystals by the Method of Orthogonalized Plane Waves ⋮ Motion of Electrons and Holes in Perturbed Periodic Fields
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