Electronic and magnetic properties of doped silicon carbide nanosheet under an external electric field

DOI10.1007/S10773-023-05415-8OpenAlexW4382283227MaRDI QIDQ6164232FDOQ6164232

Authors: Mohammad A. Salem, Jamal A. Talla, Alaa L. Al-Moumani 

Publication date: 27 July 2023

Published in: International Journal of Theoretical Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s10773-023-05415-8

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zbMATH Keywords

band structuredensity functional theorymagnetic propertiesexternal electric fieldelectronic propertiestransition metalssilicon carbide nanosheet

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Quantum theory (81-XX) Relativity and gravitational theory (83-XX)

Cites Work

• Electronic and magnetic properties of doped silicon carbide nanosheet under an external electric field

Cited In (2)

• Electronic and magnetic properties of doped silicon carbide nanosheet under an external electric field
• Magnetic properties of Graphene-like quantum dots doped with magnetic ions

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