A Hessian Recovery Based Linear Finite Element Method for Molecular Beam Epitaxy Growth Model with Slope Selection
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Publication:6181802
DOI10.4208/aamm.oa-2021-0193MaRDI QIDQ6181802
Publication date: 23 January 2024
Published in: Advances in Applied Mathematics and Mechanics (Search for Journal in Brave)
Cites Work
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- A fully discrete stable discontinuous Galerkin method for the thin film epitaxy problem without slope selection
- A finite element method for a biharmonic equation based on gradient recovery operators
- A mixed finite element method for thin film epitaxy
- Efficient energy stable numerical schemes for a phase field moving contact line model
- Epitaxial growth without slope selection: energetics, coarsening, and dynamic scaling
- Unconditionally stable schemes for equations of thin film epitaxy
- Numerical approximations for the molecular beam epitaxial growth model based on the invariant energy quadratization method
- Regularized linear schemes for the molecular beam epitaxy model with slope selection
- A \(C^0\) linear finite element method for biharmonic problems
- Island dynamics and the level set method for epitaxial growth
- Upper bounds on coarsening rates
- A linear energy stable scheme for a thin film model without slope selection
- A continuum model of kinetic roughening and coarsening in thin films
- Hessian recovery based finite element methods for the Cahn-Hilliard equation
- Adaptive time-stepping algorithms for molecular beam epitaxy: based on energy or roughness
- Numerical approximations to a new phase field model for two phase flows of complex fluids
- Über ein Variationsprinzip zur Lösung von Dirichlet-Problemen bei Verwendung von Teilräumen, die keinen Randbedingungen unterworfen sind. (On a variational principle for solving Dirichlet problems less boundary conditions using subspaces)
- An accurate and efficient algorithm for the time-fractional molecular beam epitaxy model with slope selection
- Characterizing the Stabilization Size for Semi-Implicit Fourier-Spectral Method to Phase Field Equations
- Second-order Convex Splitting Schemes for Gradient Flows with Ehrlich–Schwoebel Type Energy: Application to Thin Film Epitaxy
- Error Analysis of a Mixed Finite Element Method for the Molecular Beam Epitaxy Model
- Decoupled, Energy Stable Schemes for Phase-Field Models of Two-Phase Incompressible Flows
- Convergence of a Fast Explicit Operator Splitting Method for the Epitaxial Growth Model with Slope Selection
- Hessian recovery for finite element methods
- An Adaptive Time-Stepping Strategy for the Molecular Beam Epitaxy Models
- The stability and convergence of two linearized finite difference schemes for the nonlinear epitaxial growth model
- The superconvergent patch recovery anda posteriori error estimates. Part 1: The recovery technique
- Upper bound on the coarsening rate for an epitaxial growth model
- A second‐order energy stable backward differentiation formula method for the epitaxial thin film equation with slope selection
- A $C^0$ linear finite element method for two fourth-order eigenvalue problems
- Thin film epitaxy with or without slope selection
- Error Estimate of a Second Order Accurate Scalar Auxiliary Variable (SAV) Numerical Method for the Epitaxial Thin Film Equation
- A Novel Second-Order Scheme for the Molecular Beam Epitaxy Model with Slope Selection
- A New Class of Efficient and Robust Energy Stable Schemes for Gradient Flows
- A New Finite Element Gradient Recovery Method: Superconvergence Property
- Decoupled Energy Stable Schemes for Phase-Field Models of Two-Phase Complex Fluids
- Stability Analysis of Large Time‐Stepping Methods for Epitaxial Growth Models
- Adaptive Second-Order Crank--Nicolson Time-Stepping Schemes for Time-Fractional Molecular Beam Epitaxial Growth Models
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