Stability and semi-classical limit in a semiconductor full quantum hydrodynamic model with non-flat doping profile

arXiv1706.01621MaRDI QIDQ6287528FDOQ6287528

Publication date: 6 June 2017

Abstract: We present the new results on stability and semi-classical limit in a semiconductor full quantum hydrodynamic (FQHD) model with non-flat doping profile. The FQHD model can be used to analyze the thermal and quantum influences on the transport of carriers (electrons or holes) in semiconductor device. Inspired by the physical motivation, we consider the initial-boundary value problem of this model over the one-dimensional bounded domain and adopt the ohmic contact boundary condition and the vanishing bohmenian-type boundary condition. Firstly, the existence and asymptotic stability of a stationary solution are proved by Leray- Schauder fixed-point theorem, Schauder fixed-point theorem and the refined energy method. Secondly, we show the semi-classical limit results for both stationary solutions and global solutions by the elaborate energy estimates and the compactness argument. The strong convergence rates of the related asymptotic sequences of solutions are also obtained.

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) Existence problems for PDEs: global existence, local existence, non-existence (35A01) Initial-boundary value problems for mixed-type systems of PDEs (35M33) PDEs in connection with quantum mechanics (35Q40) Quantum hydrodynamics and relativistic hydrodynamics (76Y05) Statistical mechanics of semiconductors (82D37)

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