Well-posedness for the incompressible Hall-MHD system with initial magnetic field belonging to H^{\frac{3}{2}}(\mathbb{R}^3)

From MaRDI portal
Publication:6375751

DOI10.1007/S00021-023-00766-YarXiv2108.09599MaRDI QIDQ6375751FDOQ6375751


Authors: Shunhang Zhang Edit this on Wikidata


Publication date: 21 August 2021

Abstract: In this paper, we first prove the local well-posedness of strong solutions to the incompressible Hall-MHD system for initial data (u0,B0)inHfrac12+sigma(mathbbR3)imesHfrac32(mathbbR3) with sigmain(0,2). In particular, if the viscosity coefficient is equal to the resistivity coefficient, we can reduce sigma to 0 with the aid of the new formulation of the Hall-MHD system observed by Danchin and Tan (Commun Partial Differ Equ 46(1):31-65, 2021). Compared with the previous works, our local well-posedness results improve the regularity condition on the initial data. Moreover, we establish the global well-posedness for small initial data in Hfrac12+sigma(mathbbR3)imesHfrac32(mathbbR3) with sigmain(0,2), and get the optimal time-decay rates of solutions.













This page was built for publication: Well-posedness for the incompressible Hall-MHD system with initial magnetic field belonging to $H^{\frac{3}{2}}(\mathbb{R}^3)$

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q6375751)