Effect of Rashba spin-orbit coupling on the spin-polarized transport in ferromagnet/semiconductor double tunnel junctions
DOI10.1016/J.PHYSLETA.2008.06.021zbMATH Open1223.82066OpenAlexW2081175660MaRDI QIDQ641253FDOQ641253
Authors: Juan-Miguel Gracia 
Publication date: 21 October 2011
Published in: Physics Letters. A (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.physleta.2008.06.021
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Cites Work
Cited In (13)
- Tunnel barrier and noncollinear magnetization effects on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions
- TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC SEMICONDUCTOR TUNNEL JUNCTIONS
- SPIN POLARIZATION AND TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC/SEMICONDUCTOR/FERROMAGNETIC HETEROSTRUCTURE
- Gate control of Rashba spin-orbit coupling in multiple-quantum-well structure: from one to multiple subbands
- Reexamination of spin transport through a double-\(\delta \) magnetic barrier with spin-orbit interactions
- Spin-dependent transmission through a Rashba spin-split system with ferromagnet contacts
- Spin polarizations of electron with Rashba couplings in T-shaped devices: a finite element approach
- Properties of resonance transmission through a semiconductor double-well structure with spin-orbit coupling
- Effects of Rashba spin-orbit coupling interface on the orientation-dependent conductance in ferromagnet/spin-triplet superconductor junction
- Theoretical consideration of spin-polarized resonant tunneling in magnetic tunnel junctions
- Inverse Spin Hall Effect in Two-Terminal Device with Rashba Spin-Orbit Coupling
- Rashba spin-orbit effect on Dwell time of electrons tunneling through semiconductor barrier
- Linear conductance and tunnel magnetoresistance in a Rashba quantum dot ring coupled to ferromagnetic leads
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