Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots
DOI10.1016/J.PHYSLETA.2008.08.062zbMATH Open1225.82068OpenAlexW1993860675MaRDI QIDQ644080FDOQ644080
Authors: Congxin Xia, Yaming Liu, Shuyi Wei
Publication date: 2 November 2011
Published in: Physics Letters. A (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.physleta.2008.08.062
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Cites Work
Cited In (10)
- Effect od applied electric field on acceptor states in zinc-blende InGaN/GaN quantum dot
- Hydrogenic donor states in wurtzite InGaN/GaN coupled quantum dots
- The effect of position dependent effective mass of hydrogenic impurities in parabolic GaAs/GaAlAs quantum dots in a strong magnetic field
- Donor and acceptor states in GaAs-(Ga,Al)As quantum dots: effects of hydrostatic pressure and an intense laser
- Binding energy and photoionization cross section of piezoelectric core/shell quantum dots
- Resonant donor states in quantum well
- External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum well wire
- Hydrogenic impurity states in wurtzite ZnO/MgZnO quantum dot
- PHOTOIONIZATION CROSS-SECTION AND OSCILLATOR STRENGTH OF HYDROGENIC IMPURITIES IN ZnS/SiO2 QUANTUM DOTS
- Shallow donor impurity ground state in a GaAs/AlAs spherical quantum dot within an electric field
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