Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots

DOI10.1016/J.PHYSLETA.2008.08.062MaRDI QIDQ644080zbMATH OpenOpenAlexFDO

Authors Congxin Xia, Yaming Liu, Shuyi Wei

Publication date 2 November 2011

Published in Physics Letters. A (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.physleta.2008.08.062

zbMATH Keywords

quantum dotshydrogenic impurity

Mathematics Subject Classification ID

Variational principles of physics (49S05) Statistical mechanics of solids (82D20) Quantum dots, waveguides, ratchets, etc. (81Q37) Electrochemistry (78A57) Quantum dots as quasi particles (81V65)

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Cites work

• A general treatment of deformation effects in Hamiltonians for inhomogeneous crystalline materials
• Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots
• Hydrogenic donor states in wurtzite InGaN/GaN coupled quantum dots

Cited in

(10)

• PHOTOIONIZATION CROSS-SECTION AND OSCILLATOR STRENGTH OF HYDROGENIC IMPURITIES IN ZnS/SiO₂ QUANTUM DOTS
• Hydrogenic impurity states in wurtzite ZnO/MgZnO quantum dot
• External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum well wire
• Hydrogenic donor states in wurtzite InGaN/GaN coupled quantum dots
• Binding energy and photoionization cross section of piezoelectric core/shell quantum dots
• Resonant donor states in quantum well
• The effect of position dependent effective mass of hydrogenic impurities in parabolic GaAs/GaAlAs quantum dots in a strong magnetic field
• Donor and acceptor states in GaAs-(Ga,Al)As quantum dots: effects of hydrostatic pressure and an intense laser
• Shallow donor impurity ground state in a GaAs/AlAs spherical quantum dot within an electric field
• Effect od applied electric field on acceptor states in zinc-blende InGaN/GaN quantum dot

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