Structure and electronic properties of native and defected gallium nitride nanotubes
DOI10.1016/J.PHYSLETA.2008.09.044zbMATH Open1227.82107OpenAlexW2018840879MaRDI QIDQ646923FDOQ646923
Authors: Rostam Moradian, Sam Azadi, S. Vasheghani Farahani 
Publication date: 30 November 2011
Published in: Physics Letters. A (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.physleta.2008.09.044
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Variational principles of physics (49S05) Selfadjoint operator theory in quantum theory, including spectral analysis (81Q10) Statistical mechanics of semiconductors (82D37) Statistical mechanics of nanostructures and nanoparticles (82D80)
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- The charge neutrality level and the Fermi level pinning in A\(^{3}\)N (BN, AlN, GaN, InN) nitrides
- First-principles calculations for magnetic properties of Mn-doped GaN nanotubes
- Theoretical study on the effect of vacancy defect reconstruction on electron transport in Si-C nanotubes
- Ab initio density functional theory investigation of structural and electronic properties of ZnO bundles
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