Structure and electronic properties of native and defected gallium nitride nanotubes

DOI10.1016/J.PHYSLETA.2008.09.044MaRDI QIDQ646923zbMATH OpenOpenAlexFDO

Authors Rostam Moradian, Sam Azadi, S. Vasheghani Farahani

Publication date 30 November 2011

Published in Physics Letters. A (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.physleta.2008.09.044

Mathematics Subject Classification ID

Variational principles of physics (49S05) Selfadjoint operator theory in quantum theory, including spectral analysis (81Q10) Statistical mechanics of semiconductors (82D37) Statistical mechanics of nanostructures and nanoparticles (82D80)

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Cited in

(4)

• The charge neutrality level and the Fermi level pinning in A\(^{3}\)N (BN, AlN, GaN, InN) nitrides
• Theoretical study on the effect of vacancy defect reconstruction on electron transport in Si-C nanotubes
• Ab initio density functional theory investigation of structural and electronic properties of ZnO bundles
• First-principles calculations for magnetic properties of Mn-doped GaN nanotubes

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