Truncated Lévy statistics for dispersive transport in disordered semiconductors

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Publication:654300

DOI10.1016/J.CNSNS.2011.03.027zbMATH Open1231.82085arXiv1008.3969OpenAlexW36278582MaRDI QIDQ654300FDOQ654300


Authors: R. T. Sibatov, V. V. Uchaikin Edit this on Wikidata


Publication date: 28 December 2011

Published in: Communications in Nonlinear Science and Numerical Simulation (Search for Journal in Brave)

Abstract: Probabilistic interpretation of transition from the dispersive transport regime to the quasi-Gaussian one in disordered semiconductors is given in terms of truncated Levy distributions. Corresponding transport equations with fractional order derivatives are derived. We discuss physical causes leading to truncated waiting time distributions in the process and describe influence of truncation on carrier packet form, transient current curves and frequency dependence of conductivity. Theoretical results are in a good agreement with experimental facts.


Full work available at URL: https://arxiv.org/abs/1008.3969




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