Self-consistent calculations of deep Sn and Se vacancy levels in SnSe by the Green's function method

DOI10.1007/S11182-011-9611-6MaRDI QIDQ664973zbMATH OpenOpenAlexFDO

Authors Z. A. Dzhakhangirli

Publication date 5 March 2012

Published in Russian Physics Journal (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1007/s11182-011-9611-6

zbMATH Keywords

Green's function methodpoint defectsresonances and antiresonances

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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Cites work

• Motion of Electrons and Holes in Perturbed Periodic Fields

Cited in

(4)

• Green's function-based multiscale modeling of defects in a semi-infinite silicon substrate
• Theory of the carrier Fermi energy and density of states of \(n\)- and \(p\)-type SnTe
• Theory of defects in solids. Electronic structure of defects in insulators and semiconductors
• Marker-Method Calculations for Electrical Levels Using Gaussian-Orbital Basis Sets

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