Self-consistent calculations of deep Sn and Se vacancy levels in SnSe by the Green's function method

DOI10.1007/S11182-011-9611-6zbMATH Open1235.82091OpenAlexW2050300301MaRDI QIDQ664973FDOQ664973

Authors: Z. A. Dzhakhangirli 

Publication date: 5 March 2012

Published in: Russian Physics Journal (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s11182-011-9611-6

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• scientific article; zbMATH DE number 492929

zbMATH Keywords

Green's function methodpoint defectsresonances and antiresonances

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites Work

• Motion of Electrons and Holes in Perturbed Periodic Fields

Cited In (4)

• Green's function-based multiscale modeling of defects in a semi-infinite silicon substrate
• Theory of the carrier Fermi energy and density of states of \(n\)- and \(p\)-type SnTe
• Theory of defects in solids. Electronic structure of defects in insulators and semiconductors
• Marker-Method Calculations for Electrical Levels Using Gaussian-Orbital Basis Sets

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