Conservative numerical algorithm for simulating thermoelectrical semiconductor device with unconditional optimal convergence analysis
From MaRDI portal
(Redirected from Publication:6663398)
Cites work
- A block-centered upwind approximation of the semiconductor device problem on a dynamically changing mesh
- A mixed-finite volume element coupled with the method of characteristic fractional step difference for simulating transient behavior of semiconductor device of heat conductor and its numerical analysis
- A new control volume finite element method for the stable and accurate solution of the drift-diffusion equations on general unstructured grids
- A new error analysis of characteristics-mixed FEMs for miscible displacement in porous media
- A quantum energy transport model for semiconductor device simulation
- Analysis of a two-grid method for semiconductor device problem
- Analysis on block-centered finite differences of numerical simulation of semiconductor device detector
- Electro-thermo-chemical computational models for 3D heterogeneous semiconductor device simulation
- scientific article; zbMATH DE number 5681750 (Why is no real title available?)
- scientific article; zbMATH DE number 2208228 (Why is no real title available?)
- Mixed and Hybrid Finite Element Methods
- On the modeling and simulation of reaction-transfer dynamics in semiconductor-electrolyte solar cells
- Unconditional convergence and optimal error estimates of a Galerkin-mixed FEM for incompressible miscible flow in porous media
- Unconditional stability and optimal error analysis of mass conservative characteristic mixed FEM for wormhole propagation
This page was built for publication: Conservative numerical algorithm for simulating thermoelectrical semiconductor device with unconditional optimal convergence analysis
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q6663398)
