Manganese energy level in p-InAs Mn under pressure

DOI10.3103/S1062873810080332zbMATH Open1253.82095MaRDI QIDQ693883FDOQ693883

Authors: I. K. Kamilov, M. I. Daunov, A. Yu. Mollaev, R. K. Arslanov 

Publication date: 11 December 2012

Published in: Bulletin of the Russian Academy of Sciences: Physics (Search for Journal in Brave)

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Mathematics Subject Classification ID

Statistical mechanics of magnetic materials (82D40) Statistical mechanics of semiconductors (82D37)

Cited In (2)

• The effect of pressure on electronic and magnetic properties of MnAs crystal
• Magnetic and band parameters of \((3\text{HgS})_{1-x}(\text{Al}_{2}\text{S}_{3})_x\) \((x = 0.5)\) crystals doped with manganese

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