Application of the homotopy analysis method to the Poisson-Boltzmann equation for semiconductor devices
DOI10.1016/j.cnsns.2010.09.015zbMath1221.82139OpenAlexW1993947024MaRDI QIDQ718570
Christopher J. Nassar, Joseph F. Revelli, Robert J. Bowman
Publication date: 23 September 2011
Published in: Communications in Nonlinear Science and Numerical Simulation (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.cnsns.2010.09.015
series solutionBoltzmann equationnonlinear equationshomotopy analysis methodPoissonMOSFETsemiconductor devices
Statistical mechanics of semiconductors (82D37) Numerical methods for ordinary differential equations (65L99)
Related Items (7)
Cites Work
- Series solution to the Thomas-Fermi equation
- An optimal homotopy-analysis approach for strongly nonlinear differential equations
- An explicit, totally analytic approximate solution for Blasius' viscous flow problems
- An analytic approximation of the drag coefficient for the viscous flow past a sphere
- An analytic approximate technique for free oscillations of positively damped systems with algebraically decaying amplitude
- An analytic approximate approach for free oscillations of self-excited systems
- An explicit analytic solution to the Thomas-Fermi equation.
- On the explicit analytic solution of Cheng-Chang equation
- Beyond Perturbation
- A Second-Order Approximate Analytical Solution of a Simple Pendulum by the Process Analysis Method
This page was built for publication: Application of the homotopy analysis method to the Poisson-Boltzmann equation for semiconductor devices