Impact of strain relaxation of alGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT

DOI10.1007/S11431-006-2006-1MaRDI QIDQ851263zbMATH OpenOpenAlexFDO

Authors Yan Yang, Yue Hao, Jincheng Zhang, Chong Wang, Qian Feng

Publication date 17 November 2006

Published in Science in China. Series E (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1007/s11431-006-2006-1

zbMATH Keywords

AlGaN/GaNhigh electron mobility transistorstrain relaxation

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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• Thermal modeling of GaN HEMTs

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