Impact of strain relaxation of alGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT

DOI10.1007/S11431-006-2006-1zbMATH Open1137.82353OpenAlexW2166072779MaRDI QIDQ851263FDOQ851263

Authors: Yan Yang, Yue Hao, Jincheng Zhang, Chong Wang, Qian Feng 

Publication date: 17 November 2006

Published in: Science in China. Series E (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s11431-006-2006-1

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zbMATH Keywords

AlGaN/GaNhigh electron mobility transistorstrain relaxation

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cited In (1)

• Thermal modeling of GaN HEMTs

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