Domain patterns in the microwave-induced zero-resistance state

DOI10.1007/S10955-006-9037-7MaRDI QIDQ867719zbMATH OpenOpenAlexFDO

Authors Ilya Finkler, Bertrand I. Halperin, Assa Auerbach, Amir Jacoby

Publication date 16 February 2007

Published in Journal of Statistical Physics (Search for Journal in Brave)

Full work available at URL https://arxiv.org/abs/cond-mat/0510722

zbMATH Keywords

quantum Hall effecttwo-dimensional electron gasmesoscopic systemsphotoconductivity

Mathematics Subject Classification ID

Waves and radiation in optics and electromagnetic theory (78A40) Many-body theory; quantum Hall effect (81V70) Statistical mechanics of solids (82D20) Statistical mechanics of random media, disordered materials (including liquid crystals and spin glasses) (82D30)

Abstract: It has been proposed that the microwave-induced ``zero-resistance phenomenon, observed in a GaAs two-dimensional electron system at low temperatures in moderate magnetic fields, results from a state with multiple domains, in which a large local electric field $$ is oriented in different directions. We explore here the questions of what may determine the domain arrangement in a given sample, what do the domains look like in representative cases, and what may be the consequences of domain-wall localization on the macroscopic dc conductance. We consider both effects of sample boundaries and effects of disorder, in a simple model, which has a constant Hall conductivity, and is characterized by a Lyapunov functional.

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Cites work

• Pattern formation outside of equilibrium

Cited in

(2)

• Linear response of zero-resistance states
• Symmetries in Hall-like systems: microwave and nonlinear transport effects

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