Relaxation limit and initial layer analysis of a bipolar hydrodynamic model for semiconductors
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Publication:969903
DOI10.1016/J.MCM.2009.04.013zbMATH Open1185.82061OpenAlexW2046565579MaRDI QIDQ969903FDOQ969903
Authors: Yeping Li 
Publication date: 8 May 2010
Published in: Mathematical and Computer Modelling (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.mcm.2009.04.013
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Cites Work
- Convergence of the Godunov scheme for a simplified one-dimensional hydrodynamic model for semiconductor devices
- The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations
- Global smooth solutions to the multi-dimensional hydrodynamic model for two-carrier plasmas
- On a one-dimensional steady-state hydrodynamic model for semiconductors
- Quasi-hydrodynamic semiconductor equations
- Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
- The bipolar hydrodynamic model for semiconductors and the drift-diffusion equations
- Global existence and asymptotic behavior for a multidimensional nonisentropic hydrodynamic semiconductor model with the heat source
- Title not available (Why is that?)
- Title not available (Why is that?)
- Large Time Behavior of the Solutions to a Hydrodynamic Model for Semiconductors
- The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors
- Global Existence and Relaxation Limit for Smooth Solutions to the Euler--Poisson Model for Semiconductors
- Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors
- Compressible fluid flow and systems of conservation laws in several space variables
- A PHASE PLANE ANALYSIS OF TRANSONIC SOLUTIONS FOR THE HYDRODYNAMIC SEMICONDUCTOR MODEL
- Title not available (Why is that?)
- Gelfand Theory of Pseudo Differential Operators and Hypoelliptic Operators
- HYPERBOLIC-PARABOLIC SINGULAR LIMITS FOR FIRST-ORDER NONLINEAR SYSTEMS
- An Initial Value Problem from Semiconductor Device Theory
- Diffusion relaxation limit of a bipolar hydrodynamic model for semiconductors
- ON THE 3-D BIPOLAR ISENTROPIC EULER–POISSON MODEL FOR SEMICONDUCTORS AND THE DRIFT-DIFFUSION LIMIT
- The relaxation to the drift-diffusion system for the 3-D isentropic Euler-Poisson model for semiconductors
- Diffusive Relaxation Limit of Multidimensional Isentropic Hydrodynamical Models for Semiconductors
- Title not available (Why is that?)
- Relaxation of the isothermal Euler-Poisson system to the drift-diffusion equations
- Title not available (Why is that?)
- Weak solutions to a one-dimensional hydrodynamic model of two carrier types for semiconductors
Cited In (12)
- Relaxation-time limit and initial layer in the isentropic hydrodynamic model for semiconductors
- Large time behavior of a bipolar hydrodynamic model with large data and vacuum
- The relaxation limits to the bipolar hydrodynamic model for semiconductors
- Relaxation limit in bipolar semiconductor hydrodynamic model with non-constant doping profile
- On the relaxation-time limits in bipolar hydrodynamic models for semiconductors
- Relaxation-time limit of the multidimensional bipolar hydrodynamic model in Besov space
- Relaxation limit and initial layer to hydrodynamic models for semiconductors
- Initial layer and relaxation limit of non-isentropic compressible Euler equations with damping
- Title not available (Why is that?)
- On the Gouy-Chapman-Stern model of the electrical double-layer structure with a generalized Boltzmann factor
- THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
- Hierarchy of semiconductor equations: relaxation limits with initial layers for large initial data.
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