Numerical simulation of LEC growth of InP crystal with an axial magnetic field
From MaRDI portal
(Redirected from Publication:981329)
Recommendations
- Numerical analysis of LEC growth of gaAs with an axial magnetic field
- Numerical modeling of crystal growth under strong magnetic fields: an application to the travelling heater method
- The Effect of an Axial Magnetic Field at the Interface of a Crystal Grown by the Czochralski Method
- Three-dimensional modelling of GeSi growth in presence of axial and rotating magnetic fields
- Numerical simulation of liquid-encapsulant float zone growth of indium phosphide crystals in zero gravity
- Macrosegregation during alloyed semiconductor crystal growth in strong axial and transverse magnetic fields
- Numerical simulation of the Czochralski growth process of oxide crystals with a relatively thin optical thickness
- Dopant transport during semiconductor crystal growth in space with a steady magnetic field
- Inertial effects in the rotationally driven melt motion during the Czochralski growth of silicon crystals with a strong axial magnetic field
- The combined effects of magnetic field and magnetic field gradients on convection in crystal growth
Cited in
(5)- Numerical analysis of LEC growth of gaAs with an axial magnetic field
- Numerical simulation of liquid-encapsulant float zone growth of indium phosphide crystals in zero gravity
- Experimental study of the suppression of Rayleigh-Bénard instability in a cylinder by combined rotating and static magnetic fields
- Grown-in defects of InSb crystals: Models and computation.
- A perturbation model for the growth of type III-V compound crystals
This page was built for publication: Numerical simulation of LEC growth of InP crystal with an axial magnetic field
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q981329)