Relaxation limit and initial layer to hydrodynamic models for semiconductors
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Publication:994298
DOI10.1016/J.JDE.2010.06.008zbMATH Open1214.35052OpenAlexW2075858134MaRDI QIDQ994298FDOQ994298
Authors: Shinya Nishibata, Masahiro Suzuki 
Publication date: 17 September 2010
Published in: Journal of Differential Equations (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jde.2010.06.008
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stabilityasymptotic behaviourexistencesingular limitstationary solutionsemiconductorsdrift-diffusion modelhydrodynamic model
Asymptotic behavior of solutions to PDEs (35B40) PDEs in connection with fluid mechanics (35Q35) PDEs in connection with optics and electromagnetic theory (35Q60) Diffusion (76R50) Magnetohydrodynamics and electrohydrodynamics (76W05) Statistical mechanics of semiconductors (82D37)
Cites Work
- On a one-dimensional steady-state hydrodynamic model for semiconductors
- Quasi-hydrodynamic semiconductor equations
- Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
- Asymptotic stability of a stationary solution to a hydrodynamic model of semiconductors
- A singular limit for hyperbolic-elliptic coupled systems in radiation hydrodynamics
- Title not available (Why is that?)
- Large Time Behavior of the Solutions to a Hydrodynamic Model for Semiconductors
- Global Existence and Relaxation Limit for Smooth Solutions to the Euler--Poisson Model for Semiconductors
- Asymptotic behaviour of solutions of the hydrodynamic model of semiconductors
- Stability of semiconductor states with insulating and contact boundary conditions
- Asymptotic behavior of subsonic entropy solutions of the isentropic Euler-Poisson equations
- Large-time behavior of solutions to hyperbolic-elliptic coupled systems
- Asymptotic behavior of solutions of transport equations for semiconductor devices
- On the basic equations for carrier transport in semiconductors
- Diffusive Relaxation Limit of Multidimensional Isentropic Hydrodynamical Models for Semiconductors
- Theory of the flow of electrons and holes in Germanium and other semiconductors
- Initial boundary value problems for a quantum hydrodynamic model of semiconductors: asymptotic behaviors and classical limits
- Title not available (Why is that?)
- SINGULAR CONVERGENCE TO NONLINEAR DIFFUSION WAVES FOR SOLUTIONS TO THE CAUCHY PROBLEM FOR THE COMPRESSIBLE EULER EQUATIONS WITH DAMPING
- Stability and instability of steady-state solutions for a hydrodynamic model of semiconductors
Cited In (26)
- Relaxation-time limit and initial layer in the isentropic hydrodynamic model for semiconductors
- Some mathematical analysis in semiconductor devices
- Combined relaxation and non-relativistic limit of non-isentropic Euler–Maxwell equations
- Diffusion relaxation limit of a nonisentropic hydrodynamic model for semiconductors
- Global Existence Result for Pair Diffusion Models
- ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
- Relaxation time limits problem for hydrodynamic models in semiconductor science
- Local well-posedness of 1D degenerate drift diffusion equation
- Relaxation-time limit in the multi-dimensional bipolar nonisentropic Euler-Poisson systems
- A relaxation scheme for the hydrodynamic equations for semiconductors
- The relaxation limits to the bipolar hydrodynamic model for semiconductors
- Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
- Relaxation limit in bipolar semiconductor hydrodynamic model with non-constant doping profile
- The relaxation-time limit in the quantum hydrodynamic equations for semiconductors
- Asymptotic limits of solutions to the initial boundary value problem for the relativistic Euler-Poisson equations
- On the steady state relativistic Euler-Poisson equations
- Local well-posedness of drift-diffusion equation with degeneracy
- Asymptotic stability of steady state solutions for the relativistic Euler-Poisson equations
- Linear analysis of the hydrodynamic model
- Initial layer and relaxation limit of non-isentropic compressible Euler equations with damping
- Title not available (Why is that?)
- Relaxation limit and initial layer analysis of a bipolar hydrodynamic model for semiconductors
- Existence and uniqueness of steady states to semiconductor bipolar full quantum hydrodynamic model
- Hierarchy of semiconductor equations: relaxation limits with initial layers for large initial data.
- Relaxation limit of the one-dimensional bipolar Euler-Poisson system in the bound domain
- Viscous shock profile and singular limit for hyperbolic systems with Cattaneo's law
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