RF Circuit Implications of Moderate Inversion Enhanced Linear Region in MOSFETs

DOI10.1109/TCSI.2003.822400MaRDI QIDQ5362908zbMATH OpenOpenAlexFDO

Authors

Publication date 4 October 2017

Published in IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1109/tcsi.2003.822400

Mathematics Subject Classification ID

Applications of design theory to circuits and networks (94C30)

Cited in

(3)

• The influence of dependence of HEMT's model parameters on gate and drain voltages on upper boundary of LNA's linearity
• New RF extrinsic resistances extraction procedure for deep-submicron MOS transistors
• Analysis of $\hbox {IM}_{\rm 3}$ Asymmetry in MOSFET Small-Signal Amplifiers

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