Semiconductor charge neutrality

concept of local charge neutrality in semiconductor

computational task

MaRDI QIDQ6534341FDOCommunityMathModDB

Description

At Ohmic contacts, the local charge-neutrality condition is often used to determine the built-in voltage by requiring zero net charge density from mobile carriers and ionized dopants. Unlike global neutrality, which only requires the total integrated charge to vanish, local charge-neutrality applies pointwise. The resulting local charge-neutrality potential can also serve as an initial guess for solving the nonlinear Poisson equation to determine thermodynamic equilibrium.

Contained entities

local charge-neutrality potential		output
band edge energy for valence band		parameter
effective density of states in the conduction band		parameter
band edge energy for conduction band		parameter
doping profile		input
effective density of states in the valence band		parameter
local charge-neutrality condition in semiconductors	$0=q(N_v\exp \left(\frac{E_v-q{\psi }_0}{k_{B}T}\right)-N_c\exp \left(\frac{q{\psi }_0-E_c}{k_{B}T}\right)+C)$	governing equation
	$C$ represents doping profile
	${\psi }_0$ represents local charge-neutrality potential
	$N_v$ represents effective density of states in the valence band
	$N_c$ represents effective density of states in the conduction band
	$E_v$ represents band edge energy for valence band
	$E_c$ represents band edge energy for conduction band
	$q$ represents elementary charge
	$k_B$ represents Boltzmann constant
	$T$ represents temperature

Further links

Item	Property
drift-diffusion model	used by
electron shuttling model	used by
semiconductor thermodynamic equilibrium	specialized by

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