Sensitivity analysis of design parameters for silicon diodes

DOI10.1007/978-3-319-15585-2_4MaRDI QIDQ2814536zbMATH OpenOpenAlexFDO

Authors J. M. Sellier, Rayna Georgieva, I. Dimov

Publication date 22 June 2016

Published in Numerical Methods and Applications (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1007/978-3-319-15585-2_4

zbMATH Keywords

Boltzmann equationBoltzmann Monte Carlo methodelectron transportFourier amplitude sensitivity testsilicon diodes

Mathematics Subject Classification ID

Boltzmann equations (35Q20) Monte Carlo methods (65C05) Numerical methods for discrete and fast Fourier transforms (65T50) Motion of charged particles (78A35) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37)

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Cited in

(2)

• Uncertainty quantification in deterministic parameterization of single diode model of a silicon solar cell
• A SENSITIVITY ANALYSIS OF THE STEADY STATE SEMICONDUCTOR DEVICE EQUATIONS

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