electron shuttling model
type: Item
instance of: mathematical model
contains: Schrödinger equation (time dependent)
contains: time-independent Schrödinger equation
contains: Lindblad equation
contains: Laplace equation for the electric potential
contains: quantum Hamiltonian (electric charge)
contains: Dirichlet boundary condition for electric potential
contains: Neumann boundary condition for electric potential
contains: periodic boundary condition for electric potential
used by: optimal control
used by: quantum time evolution
used by: quantum stationary states
used by: semiconductor charge neutrality
community: MathModDB
MaRDI profile type: MaRDI model profile
described by source: Optimal control of conveyor-mode spin-qubit shuttling in a Si/SiGe quantum bus in the presence of charged defects
description: Quantum dynamical modeling of an electron to be shuttled, governed by the electric potential generated by the clavier (and other) gates in a Silicon QuBus device. Spin and valley states as well as the respective interactions are neglected. Moreover, the current model is limited to the coherent wave packet evolution and disregards the effects of noise and dissipation.
description: quantum dynamical model of an electron to be shuttled in a Si/SiGe quantum bus