On a drift-diffusion system for semiconductor devices
type: Item
instance of: scholarly article
title: On a drift-diffusion system for semiconductor devices
zbMATH Open document ID: 1361.82038
author: Rafael Granero-Belinchón
published in: Annales Henri Poincaré
publication date: 2016-12-23T00:00:00Z
full work available at URL: https://arxiv.org/abs/1603.03839
review text: In the modeling of semiconductor devices, two nonlinear parabolic equations for the electron and hole densities are supplemented with an elliptic equation for the electrostatic potential (it states that a divergence of the related electrostatic potential depends on the difference of the relevant densities). A brief summary of the current state of art in the study of those Poisson-Nernst-Planck equations is given. In the present paper, the dissipation term in the parabolic equations is replaced by the fractional Laplacians (actually the Lévy generators) with different fractional powers. For such fractionally dissipative systems, the global existence of solutions is investigated and several decay estimates for the Lebesgue and Sobolev norms in one, two and three dimensions are established. The first term of the asymptotic expansion in the large-time limit is also provided.
reviewed by: Piotr Garbaczewski
Mathematics Subject Classification ID: 82D37
Mathematics Subject Classification ID: 60G22
Mathematics Subject Classification ID: 78A35
Mathematics Subject Classification ID: 35R11
Mathematics Subject Classification ID: 35C20
Mathematics Subject Classification ID: 35B40
Mathematics Subject Classification ID: 34K37
Mathematics Subject Classification ID: 35Q82
zbMATH DE Number: 6668432
zbMATH Keywords: semiconductors
zbMATH Keywords: drift-diffusion systems
zbMATH Keywords: Poisson-Nernst-Planck equations
zbMATH Keywords: fractional Laplacian
zbMATH Keywords: fractional dissipation
zbMATH Keywords: global existence of solutions
zbMATH Keywords: decay estimates in Sobolev spaces
zbMATH Keywords: asymptotic expansion
MaRDI profile type: MaRDI publication profile
OpenAlex ID: W2301333889
arXiv ID: 1603.03839
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DOI: 10.1007/S00023-016-0493-6
description: scientific article