Study of parallel numerical methods for semiconductor device simulation

DOI10.1002/JNM.596MaRDI QIDQ3376593zbMATH OpenOpenAlexFDO

Authors Natalia Seoane, A. J. García-Loureiro

Publication date 24 March 2006

Published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/jnm.596

zbMATH Keywords

Krylov solversnumerical methodsparallel processingpreconditioningsparse linear systems

Mathematics Subject Classification ID

Ill-posedness and regularization problems in numerical linear algebra (65F22) Parallel numerical computation (65Y05) Statistical mechanics of semiconductors (82D37)

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(11)

• Finite element simulation of semiconductor devices on multiprocessor computers
• Massively parallel methods for semiconductor device modelling
• Towards large-scale multi-socket, multicore parallel simulations: Performance of an MPI-only semiconductor device simulator
• Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs
• Optimization of linear systems for 3D parallel simulation of semiconductor devices: Application to statistical studies
• scientific article; zbMATH DE number 736368 (Why is no real title available?)
• An efficient preconditioning technique for numerical simulation of hydrodynamic model semiconductor devices
• scientific article; zbMATH DE number 1760091 (Why is no real title available?)
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• A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
• Parallel domain decomposition methods for a quantum-corrected drift-diffusion model for MOSFET devices

Describes a project that uses

Uses Software

• P-SPARSLIB
• PETSc
• MUMPS
• METIS
• AztecOO
• Aztec

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