The characteristic finite volume element method for 1-D semiconductor device simulation
From MaRDI portal
Finite volume methods for initial value and initial-boundary value problems involving PDEs (65M08) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Numerical aspects of the method of characteristics for initial value and initial-boundary value problems involving PDEs (65M25) Statistical mechanics of semiconductors (82D37)
Recommendations
- Finite volume element method along characteristics for the one dimension semiconductor device
- H^1 error estimates for the finite volume element method along characteristics for two dimensional semiconductor device with heat conduction
- A finite volume element approximation and analysis for one-dimensional semiconductor device simulation
- Finite volume element methods and analysis along characteristics for the one dimensional cubic semiconductor device simulation
- Finite volume element approximation and analysis for a kind of semiconductor device simulation
Cited in
(8)- Upwind finite volume element methods for one-dimensional semiconductor device
- Finite volume element methods and analysis along characteristics for the one dimensional cubic semiconductor device simulation
- A finite volume element approximation and analysis for one-dimensional semiconductor device simulation
- H^1 error estimates for the finite volume element method along characteristics for two dimensional semiconductor device with heat conduction
- Quadratic finite volume element method along characteristics for the semiconductor device of heat conduction: H^1 error estimates
- scientific article; zbMATH DE number 1910730 (Why is no real title available?)
- Finite volume element method along characteristics for the one dimension semiconductor device
- Finite volume element approximation and analysis for a kind of semiconductor device simulation
This page was built for publication: The characteristic finite volume element method for 1-D semiconductor device simulation
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3017746)
