Two-dimensional adaptive simulation of dopant diffusion in silicon
From MaRDI portal
Recommendations
- scientific article; zbMATH DE number 1588456
- scientific article; zbMATH DE number 1295002
- scientific article; zbMATH DE number 665495
- Simulation of coupled diffusion of impurity atoms and point defects under nonequilibrium conditions in local domain
- On an adaptive time stepping strategy for solving nonlinear diffusion equations
Cited in
(11)- High-order linearly implicit two-step peer - finite element methods for time-dependent PDEs
- Simulation of coupled diffusion of impurity atoms and point defects under nonequilibrium conditions in local domain
- On an adaptive time stepping strategy for solving nonlinear diffusion equations
- scientific article; zbMATH DE number 1588456 (Why is no real title available?)
- Diffusion of Dopant in Crystalline Silicon: An Asymptotic Analysis
- AN EFFICIENT DIFFUSION ALGORITHM FOR 2‐D VLSI PROCESS MODELING CODE
- scientific article; zbMATH DE number 4072321 (Why is no real title available?)
- scientific article; zbMATH DE number 665495 (Why is no real title available?)
- scientific article; zbMATH DE number 978487 (Why is no real title available?)
- Simulation of the postexposure bake process of chemically amplified resists by reaction-diffusion equations
- Maximum a posteriori estimation of activation energies that control silicon self-diffusion
This page was built for publication: Two-dimensional adaptive simulation of dopant diffusion in silicon
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q5933368)