Pages that link to "Item:Q3156132"
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The following pages link to Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver (Q3156132):
Displaying 12 items.
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
- Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire (Q738065) (← links)
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle (Q1931019) (← links)
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) (← links)
- 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods (Q2490272) (← links)
- Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model (Q2945469) (← links)
- Heat generation in silicon nanometric semiconductor devices (Q2970720) (← links)
- Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model (Q5066291) (← links)
- A combined multicell‐WENO solver for the Boltzmann‐Poisson system of 1D semiconductor devices (Q5707802) (← links)
- Numerical scheme for the far-out-of-equilibrium time-dependent Boltzmann collision operator: 1D second-degree momentum discretisation and adaptive time stepping (Q6104167) (← links)
- Numerical solver for the time-dependent far-from-equilibrium Boltzmann equation (Q6104192) (← links)
- Numerical solver for the out-of-equilibrium time dependent Boltzmann collision operator: application to 2D materials (Q6156977) (← links)