Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764)
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scientific article; zbMATH DE number 6359553
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| English | Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle |
scientific article; zbMATH DE number 6359553 |
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Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (English)
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21 October 2014
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quantum transport
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semiconductor
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hydrodynamical models
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0.9245228171348572
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0.907010853290558
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0.8225415349006653
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0.8162145018577576
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0.8142251968383789
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