Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764)
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| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle |
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Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (English)
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21 October 2014
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quantum transport
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semiconductor
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hydrodynamical models
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