Numerical simulation of semiconductor devices by the MEP energy-transport model with crystal heating (Q2902822)
From MaRDI portal
 | This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use this page instead for the normal view: Numerical simulation of semiconductor devices by the MEP energy-transport model with crystal heating |
scientific article; zbMATH DE number 6069967
| Language | Label | Description | Also known as |
|---|---|---|---|
| default for all languages | No label defined |
||
| English | Numerical simulation of semiconductor devices by the MEP energy-transport model with crystal heating |
scientific article; zbMATH DE number 6069967 |
Statements
Numerical Simulation of Semiconductor Devices by the MEP Energy-Transport Model with Crystal Heating (English)
0 references
22 August 2012
0 references
semiconductor devices
0 references
electron-phonon system
0 references
maximum entropy principle (MEP)
0 references
0.8747867941856384
0 references
0.8139992356300354
0 references
0.8075911402702332
0 references
0.8045465350151062
0 references
