Numerical simulation of semiconductor devices by the MEP energy-transport model with crystal heating

DOI10.1007/978-3-642-22453-9_38MaRDI QIDQ2902822zbMATH OpenOpenAlexFDO

Authors Vittorio Romano, Alexander Rusakov

Publication date 22 August 2012

Published in Scientific Computing in Electrical Engineering SCEE 2010 (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1007/978-3-642-22453-9_38

zbMATH Keywords

semiconductor deviceselectron-phonon systemmaximum entropy principle (MEP)

Mathematics Subject Classification ID

Motion of charged particles (78A35) Statistical mechanics of semiconductors (82D37)

Recommendations

• 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
• An energy transport model describing heat generation and conduction in silicon semiconductors
• Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
• 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
• scientific article; zbMATH DE number 665488

Cited in

(11)

• 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
• Modeling the heating of semiconductor crystal lattice based on the maximum entropy principle
• Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
• Group classification of an energy transport model for semiconductors with crystal heating
• Heat generation in silicon nanometric semiconductor devices
• 1D numerical simulation of the mep mathematical model in ballistic diode problem
• Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
• scientific article; zbMATH DE number 665488 (Why is no real title available?)
• 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
• Analysis of self-heating effects in sub-micron silicon devices with electrothermal Monte Carlo simulations
• Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient

This page was built for publication: Numerical simulation of semiconductor devices by the MEP energy-transport model with crystal heating

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q2902822)