Numerical Simulation of Semiconductor Devices by the MEP Energy-Transport Model with Crystal Heating

DOI10.1007/978-3-642-22453-9_38zbMath1251.82065OpenAlexW2281784787MaRDI QIDQ2902822

Alexander Rusakov, Vittorio Romano

Publication date: 22 August 2012

Published in: Scientific Computing in Electrical Engineering SCEE 2010 (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/978-3-642-22453-9_38

zbMATH Keywords

electron-phonon systemsemiconductor devicesmaximum entropy principle (MEP)

Mathematics Subject Classification ID

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