Numerical simulation of semiconductor devices by the MEP energy-transport model with crystal heating

DOI10.1007/978-3-642-22453-9_38zbMATH Open1251.82065OpenAlexW2281784787MaRDI QIDQ2902822FDOQ2902822

Authors: Vittorio Romano, Alexander Rusakov 

Publication date: 22 August 2012

Published in: Scientific Computing in Electrical Engineering SCEE 2010 (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/978-3-642-22453-9_38

Recommendations

• 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
• An energy transport model describing heat generation and conduction in silicon semiconductors
• Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
• 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
• scientific article; zbMATH DE number 665488

zbMATH Keywords

semiconductor deviceselectron-phonon systemmaximum entropy principle (MEP)

Mathematics Subject Classification ID

Motion of charged particles (78A35) Statistical mechanics of semiconductors (82D37)

Cited In (11)

• 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
• Modeling the heating of semiconductor crystal lattice based on the maximum entropy principle
• Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
• Group classification of an energy transport model for semiconductors with crystal heating
• Heat generation in silicon nanometric semiconductor devices
• 1D numerical simulation of the mep mathematical model in ballistic diode problem
• Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
• Title not available (Why is that?)
• 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
• Analysis of self-heating effects in sub-micron silicon devices with electrothermal Monte Carlo simulations
• Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient

This page was built for publication: Numerical simulation of semiconductor devices by the MEP energy-transport model with crystal heating

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q2902822)