Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
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Cites work
- scientific article; zbMATH DE number 108361 (Why is no real title available?)
- scientific article; zbMATH DE number 3100112 (Why is no real title available?)
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- A Deterministic Solver to the Boltzmann-Poisson System Including Quantization Effects for Silicon-MOSFETs
- A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs
- A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
- A nonlinear determination of the distribution function of degenerate gases with an application to semiconductors
- Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
- DIFFUSIVE TRANSPORT OF PARTIALLY QUANTIZED PARTICLES: EXISTENCE, UNIQUENESS AND LONG-TIME BEHAVIOUR
- Exact Maximum Entropy Closure of the Hydrodynamical Model for Si Semiconductors: The 8-Moment Case
- Hierarchy of semiconductor equations: relaxation limits with initial layers for large initial data.
- Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle
- Information Theory and Statistical Mechanics
- Local-in-time well-posedness of a regularized mathematical model for silicon MESFET
- Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
- Numerical simulation of a hydrodynamic subband model for semiconductors based on the maximum entropy principle
- Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle
- Quantum-corrected drift-diffusion models for transport in semiconductor devices
- Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle
- Subband decomposition approach for the simulation of quantum electron transport in nanostructures
- The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
Cited in
(13)- Hydrodynamic equations for electrons in graphene obtained from the maximum entropy principle
- A new rule for MESFET gate charge division based on the energy conservation principle
- A new approach to numerical simulation of charge transport in double gate-MOSFET
- Charge transport in graphene including thermal effects
- Hydrodynamical model for charge transport in graphene
- 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
- Quantum corrected hydrodynamic models for charge transport in graphene
- A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo
- Hybrid coupling of a one-dimensional energy-transport Schrödinger system
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
- A posteriori error control in numerical simulations of semiconductor nanodevices
- An improved 2D-3D model for charge transport based on the maximum entropy principle
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