2DEG-3DEG charge transport model for MOSFET based on the maximum entropy principle

DOI10.1137/120893483zbMATH Open1291.82132OpenAlexW1978972350MaRDI QIDQ2862273FDOQ2862273

Vittorio Romano, Vito Dario Camiola

Publication date: 14 November 2013

Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1137/120893483

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zbMATH Keywords

quantum transporthydrodynamical modelssemiconductors2-D electron gases3-D electron gasesenergy transport models

Mathematics Subject Classification ID

Boltzmann equations (35Q20) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37)

Cited In (4)

• A new rule for MESFET gate charge division based on the energy conservation principle
• Hydrodynamical model for charge transport in graphene
• Boltzmann's six-moment one-dimensional nonlinear system equations with the Maxwell-Auzhan boundary conditions
• An improved 2D-3D model for charge transport based on the maximum entropy principle

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