2DEG-3DEG charge transport model for MOSFET based on the maximum entropy principle

DOI10.1137/120893483MaRDI QIDQ2862273zbMATH OpenOpenAlexFDO

Authors Vito Dario Camiola, Vittorio Romano

Publication date 14 November 2013

Published in SIAM Journal on Applied Mathematics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1137/120893483

zbMATH Keywords

quantum transporthydrodynamical modelssemiconductors2-D electron gases3-D electron gasesenergy transport models

Mathematics Subject Classification ID

Boltzmann equations (35Q20) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37)

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• Boltzmann's six-moment one-dimensional nonlinear system equations with the Maxwell-Auzhan boundary conditions
• An improved 2D-3D model for charge transport based on the maximum entropy principle

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