An improved 2D-3D model for charge transport based on the maximum entropy principle
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Publication:2201622
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Cites work
- scientific article; zbMATH DE number 1161505 (Why is no real title available?)
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- 2DEG-3DEG charge transport model for MOSFET based on the maximum entropy principle
- A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs
- A hydrodynamic model for covalent semiconductors with applications to GaN and SiC
- A hydrodynamic model for silicon semiconductors including crystal heating
- A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle
- A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo
- DSMC method consistent with the Pauli exclusion principle and comparison with deterministic solutions for charge transport in graphene
- Hydrodynamic equations for electrons in graphene obtained from the maximum entropy principle
- Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire
- Information Theory and Statistical Mechanics
- Maximum entropy moment system of the semiconductor Boltzmann equation using Kane's dispersion relation
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
- Numerical simulation of a hydrodynamic subband model for semiconductors based on the maximum entropy principle
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
- Subband decomposition approach for the simulation of quantum electron transport in nanostructures
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering
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